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vray cinema 4d r17 crack full for macThe present invention relates generally to a method and apparatus for depositing aluminum metal onto a substrate, and, more particularly, to such a method and apparatus in which thermal energy is applied to a metal source and an aluminum-containing compound to form aluminum metal on the substrate.
Although the present invention may have other applications, it is especially applicable to forming an aluminum-copper alloy for subsequent processing, such as, for example, in the fabrication of semiconductor integrated circuits. For such an application, the invention permits formation of a layer of aluminum-copper alloy containing a desired ratio of aluminum and copper, in a particularly advantageous manner.
The aluminum-copper alloy may be a brazing material, or may be a diffusion barrier. It may be used in contact with a metallic interconnect line to permit the interconnect line to be brazed to a contact hole opening in a dielectric material. Moreover, it may be used to cover a copper interconnect line adjacent to a contact hole opening in a dielectric material. These applications require an aluminum-copper alloy which is substantially uniform in thickness, and which has a low porosity.
As is well known in the metallurgical arts, aluminum and copper are essentially immiscible in the liquid state. As a consequence, aluminum and copper have not been used in integrated circuit interconnect lines, because of the difficulty of forming such lines in the form of a uniform homogeneous layer. That is, the lower melting point of copper tends to cause the aluminum and copper to form separate, ununiform layers.
In the past, efforts have been made to form aluminum-copper alloys, which are homogeneous, by first depositing a layer of aluminum, and then depositing a layer of the copper onto the aluminum. However, the copper tends to diffuse into the aluminum. Moreover, it has been difficult to maintain the desired ratio of aluminum to copper in such alloys, due to the difficulty of controlling the thickness of the copper layer. As a result, it has not been possible, using a conventional metallurgical process, to form sufficiently homogeneous layers for such semiconductor integrated

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